Mg–Ga liquid metal ion source for implantation doping of GaN
نویسندگان
چکیده
A magnesium liquid metal ion source was investigated for p-type doping of GaN. The metal is an alloy composed of 33.3% Mg and 66.7% Ga. The source type is a direct heating needle source with a spring-type reservoir, which is constructed using tungsten wire and a ceramic tube. The source has been tested and characterized in a NanoFab 150 focused ion beam ~FIB! system. A typical source lifetime was 250 mA h. Mg ion implantation of GaN thin films has been performed at different energies between 30 and 100 keV for doses ranging from 5310 to 1310 cm. After Mg FIB implantation, samples were annealed at 1100 °C in N2 ambient. Low temperature photoluminescence with a He–Cd laser of 325 nm exhibited the donor—acceptor recombination peak, which was enhanced by the activated magnesium ions. © 2001 American Vacuum Society. @DOI: 10.1116/1.1410095#
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